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Initially the research activity undertaken in EDIL through R&D projects comprised physical and numerical problems encountered in large signal time domain simulations and in the transient processes taking place in semiconductor devices. Microelectronic devices have been studied in two and three dimensions using finite difference, finite element and microscopic (Monte Carlo) methods in silicon and compound semiconductors. The high frequency and/or high power devices have been of prime interest. EDIL developed the BIMOSS simulator released in drift-diffusion version in 1985, in the hydrodynamic version in 1992 and in 3D in 1994. Now the activity comprises: process and device simulation, parameter extraction, circuit/system simulation and analog and digital design optimization. |
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AREAS OF EXPERTISE:
INFRASTRUCTURE
SERVICES
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Copyright
©2003 EDIL - Microelectronics R&D Centre |
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